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FUJI ELECTRIC  VLA517-01R  IGBT Array & Module Transistor, N Channel, 4 A, SIP

FUJI ELECTRIC VLA517-01R
Technical Data Sheet (332.97KB) EN See all Technical Docs

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Product Overview

  • Gate resistance 1.1Ω
  • High output voltage 14.5V
  • Low output voltage -4V
  • Rise & fall time 1.0µs
  • Operating temperature -25°C to +60°C
  • Pin/Package 15/SIL
  • Maximum switching frequency 40kHz
  • Single supply voltage range 20V to 22V needed
  • Photo coupler input current range 9mA to 11mA
  • Built-in over current protection circuit
  • Applications include UPS, SMPS & inverter
  • Few external components needed
  • Isolation voltage 2500V rms

 

Product Information

Transistor Polarity:
N Channel
DC Collector Current:
4A
Collector Emitter Saturation Voltage Vce(on):
-
Power Dissipation Pd:
-
Collector Emitter Voltage V(br)ceo:
-
Transistor Case Style:
SIP
No. of Pins:
15Pins
Operating Temperature Max:
60°C
Product Range:
-
Operating Temperature Min:
-25 °C
SVHC:
To Be Advised

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Legislation and Environmental

RoHS Compliant:
Yes
Independent Distributor

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