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FUJI ELECTRIC  7MBR50SB-120-50  IGBT Array & Module Transistor, Semitrans, N Channel, 75 A, 2.1 V, 360 W, 1.2 kV, Module

FUJI ELECTRIC 7MBR50SB-120-50
Technical Data Sheet (815.21KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
N Channel
DC Collector Current:
75A
Collector Emitter Saturation Voltage Vce(on):
2.1V
Power Dissipation Pd:
360W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
Module
No. of Pins:
24Pins
Operating Temperature Max:
150°C
Product Range:
-
SVHC:
To Be Advised

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Legislation and Environmental

RoHS Compliant:
Yes
Independent Distributor

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