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FUJI ELECTRIC  2MBI200SB-120-50  IGBT Array & Module Transistor, N Channel, 200 A, 2.6 V, 1.5 kW, 1.2 kV, Module

FUJI ELECTRIC 2MBI200SB-120-50
Technical Data Sheet (787.47KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
N Channel
DC Collector Current:
200A
Collector Emitter Saturation Voltage Vce(on):
2.6V
Power Dissipation Pd:
1.5kW
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
Module
No. of Pins:
7Pins
Operating Temperature Max:
150°C
Product Range:
-
Transistor Type:
IGBT Module
SVHC:
To Be Advised

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Legislation and Environmental

RoHS Compliant:
Yes
Independent Distributor

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