FUJI ELECTRIC  2MBI100U4A-120-50  IGBT Array & Module Transistor, N Channel, 150 A, 2.2 V, 540 W, 1.2 kV, Module


Image is for illustrative purposes only. Please refer to product description.

  • Manufacturer:
  • Newark Part No.: 56P5423
  • Manufacturer Part No 2MBI100U4A-120-50

Product Overview

The 2MBI100U4A-120-50 is a N-channel IGBT Array and Module Transistor, 1200V collector-emitter voltage and 540W collector power dissipation.
  • ±20V Gate-emitter voltage
  • 2500VAC Isolation voltage


Back to top

Product Specifications, Documents & More

  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Collector Emitter Voltage Vces: 2.2V
  • DC Collector Current: 150A
  • No. of Pins: 7
  • Operating Temperature Max: 125°C
  • Operating Temperature Min: -40°C
  • Power Dissipation Pd: 540W
  • SVHC: To Be Advised
  • Transistor Case Style: Module
  • Transistor Polarity: N Channel

Find similar products  grouped by common attribute



Freight Charge: $20.00 once per order

Delivery in 5-7 days for in stock items

Terms and Conditions

Check stock and lead times
    More stock available week commencing 6/20/16

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: $93.97 $93.97



Quantity List Price
1 - 24 $93.97
25 - 49 $89.02
50 - 99 $85.14
100 - 249 $82.31
250+ $79.84

Legislation and Environmental

Back to top

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.

Back to top

Customer Reviews

Customer Q&A Exchange


Like to see information about this product from other customers?

 Read discussions, blogs, documents from our community members.


Post a question to one of our experts or start a discussion and get responses from supplier experts and fellow engineers in our community.
Back to top

Customers Also Bought