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2MBI100U4A-120-50 - 

IGBT Array & Module Transistor, N Channel, 150 A, 2.2 V, 540 W, 1.2 kV, Module

FUJI ELECTRIC 2MBI100U4A-120-50

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Manufacturer Part No:
2MBI100U4A-120-50
Newark Part No.:
56P5423
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
540W
:
N Channel
:
1.2kV
:
-
:
150A
:
2.2V
:
125°C
:
7Pins
:
Module
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Product Overview

The 2MBI100U4A-120-50 is a N-channel IGBT Array and Module Transistor, 1200V collector-emitter voltage and 540W collector power dissipation.
  • ±20V Gate-emitter voltage
  • 2500VAC Isolation voltage

Applications

Industrial