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FUJI ELECTRIC  2MBI100U4A-120-50  IGBT Array & Module Transistor, N Channel, 150 A, 2.2 V, 540 W, 1.2 kV, Module

FUJI ELECTRIC 2MBI100U4A-120-50

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Product Overview

The 2MBI100U4A-120-50 is a N-channel IGBT Array and Module Transistor, 1200V collector-emitter voltage and 540W collector power dissipation.
  • ±20V Gate-emitter voltage
  • 2500VAC Isolation voltage

Applications

Industrial

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Product Information

Transistor Polarity:
N Channel
DC Collector Current:
150A
Collector Emitter Saturation Voltage Vce(on):
2.2V
Power Dissipation Pd:
540W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
Module
No. of Pins:
7Pins
Operating Temperature Max:
125°C
Product Range:
-
Operating Temperature Min:
-40 °C
SVHC:
To Be Advised

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Applications

  • Industrial

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