FUJI ELECTRIC  2MBI100U4A-120-50  IGBT Array & Module Transistor, N Channel, 150 A, 2.2 V, 540 W, 1.2 kV, Module

FUJI ELECTRIC 2MBI100U4A-120-50

Image is for illustrative purposes only. Please refer to product description.

  • Manufacturer:
  • Newark Part No.: 56P5423
  • Manufacturer Part No 2MBI100U4A-120-50

Product Overview


The 2MBI100U4A-120-50 is a N-channel IGBT Array and Module Transistor, 1200V collector-emitter voltage and 540W collector power dissipation.
  • ±20V Gate-emitter voltage
  • 2500VAC Isolation voltage

Applications

Industrial
Back to top

Product Information


  • Transistor Polarity N Channel
  • DC Collector Current 150A
  • Collector Emitter Saturation Voltage Vce(on) 2.2V
  • Power Dissipation Pd 540W
  • Collector Emitter Voltage V(br)ceo 1.2kV
  • Transistor Case Style Module
  • No. of Pins 7Pins
  • Operating Temperature Max 125°C
  • Operating Temperature Min -40 °C
  • SVHC To Be Advised

Find similar products  grouped by common attribute

Availability

Availability:  3

Freight Charge: $20.00 once per order

Delivery in 5-7 days for in stock items


 
Check stock and lead times
    More stock available week commencing 9/12/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $91.43 $91.43

Buy

Price

Quantity List Price
1 - 24 $91.43
25 - 49 $86.62
50 - 99 $82.84
100 - 249 $80.09
250+ $77.68
 
 
Low

Legislation and Environmental


Back to top

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.

Customer Reviews


Customer Q&A Exchange

Community

Like to see information about this product from other customers?

 Read discussions, blogs, documents from our community members.

Filters:

Post a question to one of our experts or start a discussion and get responses from supplier experts and fellow engineers in our community.

Customers Also Bought