FUJI ELECTRIC  2MBI100U4A-120-50  IGBT Array & Module Transistor, N Channel, 150 A, 2.2 V, 540 W, 1.2 kV, Module


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  • Manufacturer:
  • Newark Part No.: 56P5423
  • Manufacturer Part No 2MBI100U4A-120-50

Product Overview

The 2MBI100U4A-120-50 is a N-channel IGBT Array and Module Transistor, 1200V collector-emitter voltage and 540W collector power dissipation.
  • ±20V Gate-emitter voltage
  • 2500VAC Isolation voltage


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Product Specifications, Documents & More

  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Collector Emitter Voltage Vces: 2.2V
  • DC Collector Current: 150A
  • No. of Pins: 7
  • Operating Temperature Max: 125°C
  • Operating Temperature Min: -40°C
  • Power Dissipation Pd: 540W
  • SVHC: To Be Advised
  • Transistor Case Style: Module
  • Transistor Polarity: N Channel

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Availability:  32

Freight Charge: $20.00 once per order

Delivery in 5-7 days for in stock items

Terms and Conditions

Check stock and lead times
    More stock available week commencing 4/4/16

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: $97.14 $97.14



Quantity List Price
1 - 24 $97.14
25 - 49 $92.03
50 - 99 $88.01
100 - 249 $85.09
250+ $82.53

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