FUJI ELECTRIC 2MBI100U4A-120-50 IGBT Array & Module Transistor, N Channel, 150 A, 2.2 V, 540 W, 1.2 kV, Module
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- Manufacturer: FUJI ELECTRIC
- Newark Part No.: 56P5423
- Manufacturer Part No 2MBI100U4A-120-50
- ±20V Gate-emitter voltage
- 2500VAC Isolation voltage
Product Specifications, Documents & More
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Voltage Vces: 2.2V
- DC Collector Current: 150A
- No. of Pins: 7
- Operating Temperature Max: 125°C
- Operating Temperature Min: -40°C
- Power Dissipation Pd: 540W
- SVHC: To Be Advised
- Transistor Case Style: Module
- Transistor Polarity: N Channel
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