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FUJI ELECTRIC  2MBI100S-120-50  IGBT Array & Module Transistor, Dual Pack, N Channel, 150 A, 2.6 V, 780 W, 1.2 kV, Module

FUJI ELECTRIC 2MBI100S-120-50

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Product Information

Transistor Polarity:
N Channel
DC Collector Current:
150A
Collector Emitter Saturation Voltage Vce(on):
2.6V
Power Dissipation Pd:
780W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
Module
No. of Pins:
7Pins
Operating Temperature Max:
150°C
Product Range:
-
SVHC:
To Be Advised

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