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NXP  MW6S004NT1  RF FET Transistor, 68 V, 1 MHz, 2 GHz, PLD-1.5

NXP MW6S004NT1
Technical Data Sheet (498.65KB) EN See all Technical Docs

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Product Overview

The MW6S004NT1 is a N-channel RF Power FET designed for class A or class AB base station applications with frequencies up to 2000MHz. It is suitable for analogue and digital modulation and multicarrier amplifier applications.
  • Characterized with series equivalent large-signal impedance parameters
  • On-chip RF feedback for broadband stability
  • Integrated ESD protection

 

Product Information

Drain Source Voltage Vds:
68V
Continuous Drain Current Id:
-
Power Dissipation Pd:
-
Operating Frequency Min:
1MHz
Operating Frequency Max:
2GHz
RF Transistor Case:
PLD-1.5
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Transistor Type:
RF MOSFET
MSL:
MSL 3 - 168 hours
Operating Frequency Range:
1MHz to 2GHz
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • RF Communications;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 3 - 168 hours
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

RF FET Transistor, 68 V, 1 MHz, 2 GHz, PLD-1.5

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