Low

MRFE6VP6300HSR5 - 

RF FET Transistor, 125 V, 100 mA, 300 W, 1.8 MHz, 600 MHz, NI-780S

The actual product may differ from image shown

Manufacturer:
NXP NXP
Manufacturer Part No:
MRFE6VP6300HSR5
Newark Part No.:
13T4415
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
300W
:
NI-780S
:
600MHz
:
225°C
:
100mA
:
4Pins
:
1.8MHz
:
-
:
125V
:
-
Find similar products Choose and modify the attributes above to find similar products.

Product Overview

The MRFE6VP6300HSR5 is a N-channel RF Power FET designed for use in high VSWR (including laser and plasma exciters), broadcast (analogue and digital), aerospace and radio/land mobile applications. It is unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600MHz.
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single ended or in a push pull configuration
  • Qualified up to a maximum of 50VDD operation
  • Characterized from 30 to 50V for extended power range
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection
  • Greater negative gate source voltage range for improved class C operation
  • Characterized with series equivalent large signal impedance parameters

Applications

Industrial, Avionics, Power Management

Associated Products

Compare Selected