Low

NXP  MRFE6VP6300HSR5  RF FET Transistor, 125 V, 100 mA, 300 W, 1.8 MHz, 600 MHz, NI-780S

Product Overview

The MRFE6VP6300HSR5 is a N-channel RF Power FET designed for use in high VSWR (including laser and plasma exciters), broadcast (analogue and digital), aerospace and radio/land mobile applications. It is unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600MHz.
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single ended or in a push pull configuration
  • Qualified up to a maximum of 50VDD operation
  • Characterized from 30 to 50V for extended power range
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection
  • Greater negative gate source voltage range for improved class C operation
  • Characterized with series equivalent large signal impedance parameters

 

Product Information

Drain Source Voltage Vds:
125V
Continuous Drain Current Id:
100mA
Power Dissipation Pd:
300W
Operating Frequency Min:
1.8MHz
Operating Frequency Max:
600MHz
RF Transistor Case:
NI-780S
No. of Pins:
4Pins
Operating Temperature Max:
225°C
Product Range:
-
Transistor Type:
RF MOSFET
Noise Figure Typ:
26.5 dB
MSL:
-
Operating Frequency Range:
1.8MHz to 600MHz
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Industrial;
  • Avionics;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.