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MRFE6VP61K25HSR5 - 

RF FET Transistor, 125 V, 100 mA, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230S

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Manufacturer:
NXP NXP
Manufacturer Part No:
MRFE6VP61K25HSR5
Newark Part No.:
19T6332
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The MRFE6VP61K25HSR5 is a 125V N-channel wideband RF Power LDMOS Transistor featured with high ruggedness. This enhancement mode lateral MOSFET is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600MHz.
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single-ended or in a push-pull configuration
  • Qualified up to a maximum of 50VDD operation
  • Characterized from 30 to 50V for extended power range
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate-source voltage for improved class C operation
  • Characterized with series equivalent large-signal impedance parameters
  • 74.6% Typical efficiency
  • 22.9dB Typical power gain (at 230MHz)
  • -6/+10V Gate to Source voltage (VGS)
  • LDMOS Die technology
  • 0.159°C/W Thermal resistance

Applications

Industrial, Communications & Networking, Defence, Military & Aerospace, RF Communications

Warnings

ESD sensitive device, take proper precaution while handling the device.

Product Information

:
125V
:
100mA
:
1.333kW
:
1.8MHz
:
600MHz
:
NI-1230S
:
4Pins
:
225°C
:
-
:
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