NXP  MRFE6VP61K25HSR5  RF FET Transistor, 125 V, 100 mA, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230S

NXP MRFE6VP61K25HSR5

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  • Manufacturer:
  • Newark Part No.: 19T6332
  • Manufacturer Part No MRFE6VP61K25HSR5

Product Overview


The MRFE6VP61K25HSR5 is a 125V N-channel wideband RF Power LDMOS Transistor featured with high ruggedness. This enhancement mode lateral MOSFET is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600MHz.
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single-ended or in a push-pull configuration
  • Qualified up to a maximum of 50VDD operation
  • Characterized from 30 to 50V for extended power range
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate-source voltage for improved class C operation
  • Characterized with series equivalent large-signal impedance parameters
  • 74.6% Typical efficiency
  • 22.9dB Typical power gain (at 230MHz)
  • -6/+10V Gate to Source voltage (VGS)
  • LDMOS Die technology
  • 0.159°C/W Thermal resistance

Applications

Industrial; Communications & Networking; Defence, Military & Aerospace; RF Communications
ESD sensitive device, take proper precaution while handling the device.
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Product Information


  • Drain Source Voltage Vds 125V
  • Continuous Drain Current Id 100mA
  • Power Dissipation Pd 1.333kW
  • Operating Frequency Min 1.8MHz
  • Operating Frequency Max 600MHz
  • RF Transistor Case NI-1230S
  • No. of Pins 4Pins
  • Operating Temperature Max 225°C
  • Transistor Type RF MOSFET
  • Noise Figure Typ 24 dB
  • MSL -
  • Operating Frequency Range 1.8MHz to 600MHz
  • SVHC No SVHC (17-Dec-2015)

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    Price: $371.63 $371.63

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