NXP  MRFE6VP61K25HSR5  RF FET Transistor, 125 V, 100 mA, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230S

Product Overview

The MRFE6VP61K25HSR5 is a 125V N-channel wideband RF Power LDMOS Transistor featured with high ruggedness. This enhancement mode lateral MOSFET is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600MHz.
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single-ended or in a push-pull configuration
  • Qualified up to a maximum of 50VDD operation
  • Characterized from 30 to 50V for extended power range
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate-source voltage for improved class C operation
  • Characterized with series equivalent large-signal impedance parameters
  • 74.6% Typical efficiency
  • 22.9dB Typical power gain (at 230MHz)
  • -6/+10V Gate to Source voltage (VGS)
  • LDMOS Die technology
  • 0.159°C/W Thermal resistance
ESD sensitive device, take proper precaution while handling the device.


Product Information

Drain Source Voltage Vds:
Continuous Drain Current Id:
Power Dissipation Pd:
Operating Frequency Min:
Operating Frequency Max:
RF Transistor Case:
No. of Pins:
Operating Temperature Max:
Product Range:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute


  • Industrial;
  • Communications & Networking;
  • Defence, Military & Aerospace;
  • RF Communications

Legislation and Environmental

Moisture Sensitivity Level:
Product Traceability
RoHS Compliant:
Authorized Distributor

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