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NXP  MRFE6VP61K25HSR5  RF FET Transistor, 125 V, 100 mA, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230S

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NXP MRFE6VP61K25HSR5
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Product Overview

The MRFE6VP61K25HSR5 is a 125V N-channel wideband RF Power LDMOS Transistor featured with high ruggedness. This enhancement mode lateral MOSFET is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600MHz.
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single-ended or in a push-pull configuration
  • Qualified up to a maximum of 50VDD operation
  • Characterized from 30 to 50V for extended power range
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate-source voltage for improved class C operation
  • Characterized with series equivalent large-signal impedance parameters
  • 74.6% Typical efficiency
  • 22.9dB Typical power gain (at 230MHz)
  • -6/+10V Gate to Source voltage (VGS)
  • LDMOS Die technology
  • 0.159°C/W Thermal resistance

Applications

Industrial; Communications & Networking; Defence, Military & Aerospace; RF Communications
ESD sensitive device, take proper precaution while handling the device.

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Product Information

Drain Source Voltage Vds:
125V
Continuous Drain Current Id:
100mA
Power Dissipation Pd:
1.333kW
Operating Frequency Min:
1.8MHz
Operating Frequency Max:
600MHz
RF Transistor Case:
NI-1230S
No. of Pins:
4Pins
Operating Temperature Max:
225°C
Product Range:
-
Transistor Type:
RF MOSFET
Noise Figure Typ:
24 dB
MSL:
-
Operating Frequency Range:
1.8MHz to 600MHz
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

Applications

  • Industrial;
  • Communications & Networking;
  • Defence, Military & Aerospace;
  • RF Communications

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