Low

NXP  MRFE6VP5600HR5  RF FET Transistor, 130 V, 100 mA, 1.667 kW, 1.8 MHz, 600 MHz, NI-1230

NXP MRFE6VP5600HR5
Technical Data Sheet (930.49KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MRFE6VP5600HR5 is a 130V N-channel Enhancement Mode Lateral MOSFET designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single ended or in a push pull configuration
  • Qualified up to a maximum of 50VDD operation
  • Characterized from 30V to 50V for extended power range
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate source voltage

 

Product Information

Drain Source Voltage Vds:
130V
Continuous Drain Current Id:
100mA
Power Dissipation Pd:
1.667kW
Operating Frequency Min:
1.8MHz
Operating Frequency Max:
600MHz
RF Transistor Case:
NI-1230
No. of Pins:
4Pins
Operating Temperature Max:
225°C
Product Range:
-
Transistor Type:
RF MOSFET
Noise Figure Typ:
25 dB
MSL:
-
Operating Frequency Range:
1.8MHz to 600MHz
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Industrial;
  • Defence, Military & Aerospace;
  • Communications & Networking

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Substitutes

Associated Products

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.