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MRFE6VP5600HR5 - 

RF FET Transistor, 130 V, 100 mA, 1.667 kW, 1.8 MHz, 600 MHz, NI-1230

NXP MRFE6VP5600HR5

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Manufacturer:
NXP NXP
Manufacturer Part No:
MRFE6VP5600HR5
Newark Part No.:
24T5453
Technical Datasheet:
(EN)
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Product Information

:
1.667kW
:
NI-1230
:
600MHz
:
225°C
:
100mA
:
4Pins
:
1.8MHz
:
-
:
130V
:
-
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Product Overview

The MRFE6VP5600HR5 is a 130V N-channel Enhancement Mode Lateral MOSFET designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single ended or in a push pull configuration
  • Qualified up to a maximum of 50VDD operation
  • Characterized from 30V to 50V for extended power range
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate source voltage

Applications

Industrial, Defence, Military & Aerospace, Communications & Networking

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