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NXP  MRFE6VP5600HR5  RF FET Transistor, 130 V, 100 mA, 1.667 kW, 1.8 MHz, 600 MHz, NI-1230

NXP MRFE6VP5600HR5
Manufacturer:
NXP NXP
Manufacturer Part No:
MRFE6VP5600HR5
Newark Part No.:
24T5453
Technical Datasheet:
See all Technical Docs

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Product Overview

The MRFE6VP5600HR5 is a 130V N-channel Enhancement Mode Lateral MOSFET designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single ended or in a push pull configuration
  • Qualified up to a maximum of 50VDD operation
  • Characterized from 30V to 50V for extended power range
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate source voltage

 

Product Information

Drain Source Voltage Vds:
130V
Continuous Drain Current Id:
100mA
Power Dissipation Pd:
1.667kW
Operating Frequency Min:
1.8MHz
Operating Frequency Max:
600MHz
RF Transistor Case:
NI-1230
No. of Pins:
4Pins
Operating Temperature Max:
225°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Defence, Military & Aerospace;
  • Communications & Networking

Legislation and Environmental

RoHS Compliant:
Yes
Authorized Distributor

Substitutes

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