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NXP  MRF6V2300NBR5  RF FET Transistor, 110 V, 10 MHz, 600 MHz, TO-272

NXP MRF6V2300NBR5
Technical Data Sheet (1.16MB) EN See all Technical Docs

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Product Overview

The MRF6V2300NBR5 is a N-channel RF Power FET designed primarily for CW large signal output and driver applications with frequencies up to 600MHz. Devices are unmatched and are suitable for use in scientific applications.
  • Characterized with series equivalent large signal impedance parameters
  • Qualified up to a maximum of 50VDD operation
  • Integrated ESD protection
  • 225°C Capable plastic package

 

Product Information

Drain Source Voltage Vds:
110V
Continuous Drain Current Id:
-
Power Dissipation Pd:
-
Operating Frequency Min:
10MHz
Operating Frequency Max:
600MHz
RF Transistor Case:
TO-272
No. of Pins:
4Pins
Operating Temperature Max:
225°C
Product Range:
-
Transistor Type:
RF MOSFET
MSL:
MSL 3 - 168 hours
Operating Frequency Range:
10MHz to 600MHz
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Medical;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 3 - 168 hours
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Associated Products

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