Low

NXP  MRF1535NT1  RF FET Transistor, 40 V, 6 A, 35 W, 400 MHz, 520 MHz, TO-272

NXP MRF1535NT1
Technical Data Sheet (658.82KB) EN See all Technical Docs

The actual product may differ from image shown

Product Overview

The MRF1535NT1 is a lateral N-channel broadband RF Power MOSFET designed for broadband commercial and industrial applications with frequencies to 520MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 12.5V mobile FM equipment.
  • Capable of handling 20:1 VSWR (at 15.6VDC, 520MHz, 2dB overdrive)
  • Excellent thermal stability
  • Characterized with series equivalent large-signal impedance parameters
  • 55% Efficiency (at 520MHz, 12.5V)
  • 13.5dB Power gain (at 520MHz, 12.5V)
  • ±20V Gate to Source voltage (VGS)
  • LDMOS Die technology
  • 0.9°C/W Thermal resistance

 

Product Information

Drain Source Voltage Vds:
40V
Continuous Drain Current Id:
6A
Power Dissipation Pd:
35W
Operating Frequency Min:
400MHz
Operating Frequency Max:
520MHz
RF Transistor Case:
TO-272
No. of Pins:
6Pins
Operating Temperature Max:
200°C
Product Range:
-
Transistor Type:
RF FET
MSL:
MSL 3 - 168 hours
Operating Frequency Range:
400MHz to 520MHz
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Communications & Networking;
  • Commercial;
  • Industrial;
  • RF Communications

Legislation and Environmental

Moisture Sensitivity Level:
MSL 3 - 168 hours
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.