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FAIRCHILD SEMICONDUCTOR  NDT456P  MOSFET Transistor, P Channel, 7.5 A, -30 V, 0.026 ohm, -10 V, -1.5 V

FAIRCHILD SEMICONDUCTOR NDT456P
Technical Data Sheet (196.55KB) EN See all Technical Docs

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Product Overview

The NDT456P is a P-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance.
  • High density cell design for extremely low RDS (ON)
  • High power and current handling capability
  • ±20V Gate-source voltage

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
7.5A
Drain Source Voltage Vds:
-30V
On Resistance Rds(on):
0.026ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-1.5V
Power Dissipation Pd:
3W
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Y-Ex
Authorized Distributor

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MOSFET Transistor, P Channel, 7.5 A, -30 V, 0.026 ohm, -10 V, -1.5 V

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