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FAIRCHILD SEMICONDUCTOR  NDS332P  MOSFET Transistor, P Channel, 1 A, -20 V, 300 mohm, -4.5 V, -600 mV

FAIRCHILD SEMICONDUCTOR NDS332P
Technical Data Sheet (362.00KB) EN See all Technical Docs

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Product Overview

The NDS332P is a P-channel logic level enhancement-mode Power FET produced using Fairchild's proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications such as battery powered circuits where fast high-side switching and low in-line power loss are needed in a very small outline surface-mount package.
  • Very low level gate drive requirements allowing direct operation
  • Proprietary package design using copper lead-frame for superior thermal and electrical capabilities
  • High density cell design for extremely low RDS (ON)
  • Exceptional ON-resistance and maximum DC current capability

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
1A
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.3ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
-600mV
Power Dissipation Pd:
500mW
Transistor Case Style:
SuperSOT
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Portable Devices;
  • Computers & Computer Peripherals;
  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

MOSFET Transistor, P Channel, 1 A, -20 V, 300 mohm, -4.5 V, -600 mV

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