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NDS331N - 

MOSFET Transistor, N Channel, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV

NDS331N - MOSFET Transistor, N Channel, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV

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Manufacturer Part No:
NDS331N
Newark Part No.:
58K2016
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The NDS331N is a N-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance. Suited for low voltage applications in PCMCIA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.
  • High density cell design for extremely low RDS (ON)
  • Exceptional on-resistance and maximum DC current capability

Applications

Power Management, Computers & Computer Peripherals

Product Information

:
N Channel
:
1.3A
:
20V
:
0.11ohm
:
4.5V
:
700mV
:
500mW
:
SuperSOT
:
3Pins
:
150°C
:
-
:
-
:
MSL 1 - Unlimited
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More stock available week commencing 1/29/18

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Alternatives Available

67R2124 - MOSFET Transistor, N Channel, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV

87X9082 - MOSFET Transistor, N Channel, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV

$0.47 $ 0.47
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Each (Supplied on Cut Tape)
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1 + $0.47
25 + $0.326
50 + $0.238
100 + $0.15
250 + $0.138
500 + $0.127
1000 + $0.115
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