FAIRCHILD SEMICONDUCTOR  NDS331N  MOSFET Transistor, N Channel, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV


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Product Overview

The NDS331N is a N-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance. Suited for low voltage applications in PCMCIA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.
  • High density cell design for extremely low RDS (ON)
  • Exceptional on-resistance and maximum DC current capability


Power Management; Computers & Computer Peripherals
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Product Specifications, Documents & More

  • Transistor Polarity N Channel
  • Continuous Drain Current Id 1.3A
  • Drain Source Voltage Vds 20V
  • On Resistance Rds(on) 0.11ohm
  • Rds(on) Test Voltage Vgs 4.5V
  • Threshold Voltage Vgs 700mV
  • Power Dissipation Pd 500mW
  • Transistor Case Style SuperSOT
  • No. of Pins 3Pins
  • Operating Temperature Max 150°C
  • MSL MSL 1 - Unlimited
  • Operating Temperature Min -55 °C
  • SVHC No SVHC (15-Jun-2015)

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Availability:  2,550

  • 2,550 in stock for same day shipping
Check stock and lead times
    More stock available week commencing 6/6/16

Price for: Each (Supplied on Cut Tape)

Minimum order quantity: 1

Order multiple quantity: 1

Price: $0.508 $0.508



Quantity List Price
1 - 9 $0.508
10 - 99 $0.299
100 - 999 $0.141
1000+ $0.105

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  Newark Part No. Manufacturer Part No Manufacturer / Description
Avail Price Qty
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MOSFET Transistor, N Channel, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV

Availability:​ 9,000  

Price for: Each (Supplied on Full Reel)

1+ $0.09 9000+ $0.081 24000+ $0.077 45000+ $0.068


see cut-off times

  • 6,000 Further stock expected to ship on May 24, 2016
  • More stock available week commencing 6/6/16

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