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FAIRCHILD SEMICONDUCTOR  NDS0605  MOSFET Transistor, P Channel, 180 mA, -60 V, 5 ohm, -10 V, -1.7 V

FAIRCHILD SEMICONDUCTOR NDS0605
Technical Data Sheet (261.03KB) EN See all Technical Docs

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Product Overview

The NDS0605 is a P-channel enhancement-mode FET produced using Fairchild's proprietary high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. It can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
  • Voltage controlled p-channel small signal switch
  • High density cell design for low RDS (ON)
  • High saturation current

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
180mA
Drain Source Voltage Vds:
-60V
On Resistance Rds(on):
5ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-1.7V
Power Dissipation Pd:
360mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

Find similar products  grouped by common attribute

Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

MOSFET Transistor, P Channel, 180 mA, -60 V, 5 ohm, -10 V, -1.7 V

FAIRCHILD SEMICONDUCTOR

6,000 in stock

Price for: Each (Supplied on Full Reel)

3000+ $0.087 6000+ $0.079 9000+ $0.074 15000+ $0.066

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MOSFET Transistor, P Channel, 180 mA, 60 V, 5 ohm, -10 V, -1.7 V

FAIRCHILD SEMICONDUCTOR

1,885:  in stock

Price for: Each (Supplied on Cut Tape)

1+ $0.498 10+ $0.293 100+ $0.138 1000+ $0.103

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