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FAIRCHILD SEMICONDUCTOR  NDC7002N  Dual MOSFET, Dual N Channel, 510 mA, 50 V, 2 ohm, 10 V, 1.9 V

FAIRCHILD SEMICONDUCTOR NDC7002N
Technical Data Sheet (180.70KB) EN See all Technical Docs

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Product Overview

The NDC7002N is a dual N-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. This device is particularly suited for low voltage applications requiring a low current high side switch.
  • High saturation current
  • High density cell design for low RDS (ON)
  • Design using copper lead-frame for superior thermal and electrical capabilities

 

Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
510mA
Drain Source Voltage Vds:
50V
On Resistance Rds(on):
2ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.9V
Power Dissipation Pd:
900mW
Transistor Case Style:
SuperSOT
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Dual MOSFET, Dual N Channel, 510 mA, 50 V, 2 ohm, 10 V, 1.9 V

FAIRCHILD SEMICONDUCTOR

3,000 in stock

Price for: Each (Supplied on Full Reel)

3000+ $0.123 6000+ $0.114 9000+ $0.104 15000+ $0.095

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