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NDC7002N - 

Dual MOSFET, Dual N Channel, 510 mA, 50 V, 2 ohm, 10 V, 1.9 V

ON SEMICONDUCTOR/FAIRCHILD NDC7002N

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Manufacturer Part No:
NDC7002N
Newark Part No.:
58K9474
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
900mW
:
1.9V
:
-
:
150°C
:
510mA
:
6Pins
:
10V
:
Dual N Channel
:
-
:
SuperSOT
:
2ohm
:
50V
:
MSL 1 - Unlimited
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Product Overview

The NDC7002N is a dual N-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. This device is particularly suited for low voltage applications requiring a low current high side switch.
  • High saturation current
  • High density cell design for low RDS (ON)
  • Design using copper lead-frame for superior thermal and electrical capabilities

Applications

Industrial, Power Management

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ON SEMICONDUCTOR/FAIRCHILD

Dual MOSFET, Dual N Channel, 510 mA, 50 V, 2 ohm, 10 V, 1.9 V

3,000 in stock

Each (Supplied on Full Reel)

3000+ $0.12 6000+ $0.118 12000+ $0.115 18000+ $0.11 More pricing

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