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FAIRCHILD SEMICONDUCTOR  HGTP12N60C3D  IGBT Single Transistor, 24 A, 1.8 V, 104 W, 600 V, TO-220AB, 3 Pins

FAIRCHILD SEMICONDUCTOR HGTP12N60C3D

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Product Overview

The HGTP12N60C3D is a 600V N-channel IGBT with anti-parallel hyper fast diode. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25° C and 150° C. The diode used in anti-parallel with the IGBT is the RHRP3060. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
  • 210ns at TJ = 150°C Fall time

Applications

Motor Drive & Control; Power Management; Industrial
ESD sensitive device, take proper precaution while handling the device.

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Product Information

DC Collector Current:
24A
Collector Emitter Saturation Voltage Vce(on):
1.8V
Power Dissipation Pd:
104W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Transistor Type:
IGBT
MSL:
-
Operating Temperature Min:
-40 °C
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

Applications

  • Motor Drive & Control;
  • Power Management;
  • Industrial

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