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FAIRCHILD SEMICONDUCTOR  HGTG30N60C3D  IGBT Single Transistor, 63 A, 1.5 V, 208 W, 600 V, TO-247, 3 Pins

FAIRCHILD SEMICONDUCTOR HGTG30N60C3D
Technical Data Sheet (343.14KB) EN See all Technical Docs

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Product Overview

The HGTG30N60C3D is a N-channel IGBT with anti-parallel hyperfast diode. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. The much lower ON-state voltage drop varies only moderately between 25 and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. It is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
  • Short-circuit rating
  • 230ns Fall time @ TJ = 150°C
  • 208W Total power dissipation @ TC = 25°C

 

Product Information

DC Collector Current:
63A
Collector Emitter Saturation Voltage Vce(on):
1.5V
Power Dissipation Pd:
208W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
Transistor Type:
IGBT
MSL:
-
Operating Temperature Min:
-40 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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