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FAIRCHILD SEMICONDUCTOR  HGTG30N60B3D  IGBT Single Transistor, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 Pins

FAIRCHILD SEMICONDUCTOR HGTG30N60B3D
Technical Data Sheet (267.23KB) EN See all Technical Docs

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Product Overview

The HGTG30N60B3D is a N-channel IGBT with anti-parallel hyperfast diode. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. The much lower ON-state voltage drop varies only moderately between 25 and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. It is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as drivers for solenoids, relays and contactors.
  • Short-circuit rating
  • 90ns Fall time @ TJ = 150°C
  • 208W Total power dissipation @ TC = 25°C

 

Product Information

DC Collector Current:
60A
Collector Emitter Saturation Voltage Vce(on):
1.45V
Power Dissipation Pd:
208W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
Transistor Type:
IGBT
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products

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