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HGTG27N120BN - 

IGBT Single Transistor, 72 A, 1.2 kV, 500 W, 1.2 kV, TO-247, 3 Pins

HGTG27N120BN - IGBT Single Transistor, 72 A, 1.2 kV, 500 W, 1.2 kV, TO-247, 3 Pins

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Manufacturer Part No:
HGTG27N120BN
Newark Part No.:
58K1590
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The HGTG27N120BN is a 1200V N-channel IGBT with anti-parallel hyper fast diode. It is in a non-punch through (NPT) IGBT design. This NPT series is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
  • 140ns at TJ = 150°C Fall time

Applications

Motor Drive & Control, Power Management, Industrial

Warnings

ESD sensitive device, take proper precaution while handling the device.

Product Information

:
72A
:
1.2kV
:
500W
:
1.2kV
:
TO-247
:
3Pins
:
150°C
:
-
:
-
:
-
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Awaiting Delivery

Available for backorder to lead times shown

 
Check stock and lead times

450 Further stock expected to ship on Oct 9, 2017

More stock available week commencing 11/6/17

Contact me when back in stock

Alternatives Available

61M6561 - IGBT Single Transistor, 72 A, 2.7 V, 500 W, 1.2 kV, TO-247, 3

26Y5798 - PTD HIGH VOLTAGE

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