FAIRCHILD SEMICONDUCTOR  HGTG20N60A4D  IGBT Single Transistor, General Purpose, 70 A, 1.8 V, 290 W, 600 V, TO-247, 3 Pins

FAIRCHILD SEMICONDUCTOR HGTG20N60A4D

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Product Overview


The HGTG20N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
  • 55ns at TJ = 125°C Fall time

Applications

Motor Drive & Control; Power Management; Industrial
ESD sensitive device, take proper precaution while handling the device.
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Product Information


  • DC Collector Current 70A
  • Collector Emitter Saturation Voltage Vce(on) 1.8V
  • Power Dissipation Pd 290W
  • Collector Emitter Voltage V(br)ceo 600V
  • Transistor Case Style TO-247
  • No. of Pins 3Pins
  • Operating Temperature Max 150°C
  • Transistor Type IGBT
  • MSL -
  • Operating Temperature Min -55 °C
  • SVHC No SVHC (15-Jun-2015)

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Availability

Availability:  476


  • 476 in stock for same day shipping
 
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    More stock available week commencing 6/13/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $4.76 $4.76

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Price

Quantity List Price
1 - 9 $4.76
10 - 99 $3.83
100 - 499 $3.15
500 - 999 $2.83
1000 - 2499 $2.38
2500 - 9999 $2.27
10000+ $2.13
 
 
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