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HGTG18N120BND - 

IGBT Single Transistor, General Purpose, 54 A, 2.45 V, 390 W, 1.2 kV, TO-247, 3 Pins

FAIRCHILD SEMICONDUCTOR HGTG18N120BND

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Manufacturer Part No:
HGTG18N120BND
Newark Part No.:
58K8901
Technical Datasheet:
(EN)
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Product Information

:
390W
:
-
:
1.2kV
:
150°C
:
3Pins
:
-
:
54A
:
TO-247
:
2.45V
:
-
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Product Overview

The HGTG18N120BND is a 1200V N-channel IGBT with anti-parallel hyper fast diode. It is in a non-punch through (NPT) IGBT design. This NPT series is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
  • 140ns at TJ = 150°C Fall time

Applications

Motor Drive & Control, Power Management, Industrial, Alternative Energy

Warnings

ESD sensitive device, take proper precaution while handling the device.

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FAIRCHILD SEMICONDUCTOR

IGBT Single Transistor, General Purpose, 54 A, 2.7 V, 390 W, 1.2 kV, TO-247, 3

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