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FAIRCHILD SEMICONDUCTOR  HGTG11N120CND  IGBT Single Transistor, 43 A, 1.2 kV, 298 W, 1.2 kV, TO-247, 3 Pins

FAIRCHILD SEMICONDUCTOR HGTG11N120CND
Technical Data Sheet (105.54KB) EN See all Technical Docs

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Product Overview

The HGTG11N120CND is a 1200V N-channel IGBT with anti-parallel hyper fast diode. It is in a non-punch through (NPT) IGBT design. This NPT series is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
  • 340ns at TJ = 150°C Fall time
ESD sensitive device, take proper precaution while handling the device.

 

Product Information

DC Collector Current:
43A
Collector Emitter Saturation Voltage Vce(on):
1.2kV
Power Dissipation Pd:
298W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Transistor Type:
IGBT
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Motor Drive & Control;
  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

Associated Products

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