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FQP85N06 - 

MOSFET Transistor, N Channel, 85 A, 60 V, 10 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD FQP85N06
ON SEMICONDUCTOR/FAIRCHILD FQP85N06

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Manufacturer Part No:
FQP85N06
Newark Part No.:
34C0507
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
160W
:
4V
:
-
:
175°C
:
85A
:
3Pins
:
10V
:
N Channel
:
-
:
TO-220
:
10mohm
:
60V
:
-
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Product Overview

The FQP85N06 from Fairchild is a through hole, 60V N channel enhancement mode power QFET MOSFET in TO-220 package. This device features planar stripe and DMOS technology which has been especially tailored to minimize the onstate resistance and provide superior switching performance and high avalanche energy strength. It is suitable for switch mode power supply, audio amplifier, DC motor control and variable switching power applications.
  • Low gate charge typically 86nC
  • Low reverse transfer capacitance of typically 165pF
  • Drain to source voltage (Vds) of 60V
  • Gate to source voltage of ±25V
  • Continuous drain current (Id) of 85A
  • Power dissipation (Pd) of 160W
  • Low on state resistance of 800mohm at Vgs 10V
  • Operating temperature range from -55°C to 175°C

Applications

Power Management, Consumer Electronics, Portable Devices, Industrial

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