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FAIRCHILD SEMICONDUCTOR  FQP17P06  MOSFET Transistor, P Channel, -17 A, -60 V, 120 mohm, -10 V, -4 V

FAIRCHILD SEMICONDUCTOR FQP17P06
FAIRCHILD SEMICONDUCTOR FQP17P06
Technical Data Sheet (477.42KB) EN See all Technical Docs

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FAIRCHILD SEMICONDUCTOR FQP17P06
FAIRCHILD SEMICONDUCTOR FQP17P06

Product Overview

The FQP17P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.
  • Low gate charge
  • 100% Avalanche tested
  • Improved system reliability in PFC and soft switching topologies
  • Switching loss improvements
  • Lower conduction loss
  • 175°C Maximum junction temperature rating

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-17A
Drain Source Voltage Vds:
-60V
On Resistance Rds(on):
0.12ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
79W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Lighting;
  • Motor Drive & Control;
  • Audio

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Associated Products