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FAIRCHILD SEMICONDUCTOR  FQB5N90TM  Power MOSFET, N Channel, 5.4 A, 900 V, 1.8 ohm, 10 V, 3 V

FAIRCHILD SEMICONDUCTOR FQB5N90TM
Technical Data Sheet (779.89KB) EN See all Technical Docs

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Product Overview

The FQB5N90TM is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
  • Low gate charge (31nC)
  • Low Crss (13pF)
  • 100% avalanche tested

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
5.4A
Drain Source Voltage Vds:
900V
On Resistance Rds(on):
1.8ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
158W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Power Management;
  • Lighting

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

FQB5N90TM

TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,5.4A I(D),TO-263AB

FAIRCHILD SEMICONDUCTOR

0

Price for: Each (Supplied on Full Reel)

800+ $0.909 2400+ $0.826 9600+ $0.80

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