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FAIRCHILD SEMICONDUCTOR  FQB5N90TM  Power MOSFET, N Channel, 5.4 A, 900 V, 1.8 ohm, 10 V, 3 V

FAIRCHILD SEMICONDUCTOR FQB5N90TM
Manufacturer Part No:
FQB5N90TM
Newark Part No.:
84W8878
Technical Datasheet:
See all Technical Docs

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Product Overview

The FQB5N90TM is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provi...
  • Low gate charge (31nC)
  • Low Crss (13pF)
  • 100% avalanche tested

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
5.4A
Drain Source Voltage Vds:
900V
On Resistance Rds(on):
1.8ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
158W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Power Management;
  • Lighting

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

FQB5N90TM

TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,5.4A I(D),TO-263AB

FAIRCHILD SEMICONDUCTOR

0

Price for: Each (Supplied on Full Reel)

800+ $0.909 2400+ $0.826 9600+ $0.80

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