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FQB5N90TM - 

Power MOSFET, N Channel, 5.4 A, 900 V, 1.8 ohm, 10 V, 3 V

FAIRCHILD SEMICONDUCTOR FQB5N90TM

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Manufacturer Part No:
FQB5N90TM
Newark Part No.:
84W8878
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
158W
:
3V
:
150°C
:
5.4A
:
3Pins
:
10V
:
N Channel
:
-
:
TO-263
:
1.8ohm
:
900V
:
MSL 1 - Unlimited
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Product Overview

The FQB5N90TM is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
  • Low gate charge (31nC)
  • Low Crss (13pF)
  • 100% avalanche tested

Applications

Industrial, Power Management, Lighting

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