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FAIRCHILD SEMICONDUCTOR  FQB34P10TM  MOSFET Transistor, P Channel, -33.5 A, -100 V, 0.049 ohm, -10 V, -4 V

FAIRCHILD SEMICONDUCTOR FQB34P10TM
Technical Data Sheet (1.92MB) EN See all Technical Docs

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Product Overview

The FQB34P10TM is a QFET® P-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
  • 100% Avalanche tested
  • 85nC Typical low gate charge
  • 170pF Typical low Crss

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-33.5A
Drain Source Voltage Vds:
-100V
On Resistance Rds(on):
0.049ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
3.75W
Transistor Case Style:
TO-263AB
No. of Pins:
2Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Motor Drive & Control;
  • Audio

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

MOSFET Transistor, P Channel, -33.5 A, -100 V, 0.049 ohm, -10 V, -4 V

FAIRCHILD SEMICONDUCTOR

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Price for: Each (Supplied on Cut Tape)

1+ $2.05 10+ $1.74 100+ $1.39 500+ $1.23

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