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FAIRCHILD SEMICONDUCTOR  FQB33N10TM  MOSFET Transistor, N Channel, 33 A, 100 V, 0.04 ohm, 10 V, 4 V

FAIRCHILD SEMICONDUCTOR FQB33N10TM
Technical Data Sheet (1.66MB) EN See all Technical Docs

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Product Overview

The FQB33N10TM is a 100V N-channel QFET® MOSFET produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
  • Low gate charge (typical 38nC)
  • Low Crss (typical 62pF)
  • 100% Avalanche tested
  • ±25V Gate source voltage
  • 40°C/W Thermal resistance, junction to ambient
  • 1.18°C/W Thermal resistance, junction to case

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
33A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.04ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
127W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Audio;
  • Motor Drive & Control;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes

Substitutes

MOSFET Transistor, N Channel, 33 A, 100 V, 0.04 ohm, 10 V, 4 V

FAIRCHILD SEMICONDUCTOR

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Price for: Each (Supplied on Full Reel)

800+ $0.515 2400+ $0.468 9600+ $0.453

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