FAIRCHILD SEMICONDUCTOR  FDV301N  MOSFET Transistor, N Channel, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV


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Product Overview

The FDV301N from Fairchild is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance, this one N channel FET can replace several different digital transistors with different bias resistor values. FDV301N is suitable for low voltage and power management applications.
  • Drain to source voltage (Vds) of 25V
  • Gate to source voltage of 8V
  • Continuous drain current (Id) of 220mA
  • Power dissipation (Pd) of 350mW
  • Low on state resistance of 3.1ohm at Vgs 4.5V
  • Operating temperature range from -55°C to 150°C


Power Management; Consumer Electronics; Portable Devices; Industrial
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Product Information

  • Transistor Polarity N Channel
  • Continuous Drain Current Id 220mA
  • Drain Source Voltage Vds 25V
  • On Resistance Rds(on) 3.1ohm
  • Rds(on) Test Voltage Vgs 4.5V
  • Threshold Voltage Vgs 850mV
  • Power Dissipation Pd 350mW
  • Transistor Case Style SOT-23
  • No. of Pins 3Pins
  • Operating Temperature Max 150°C
  • MSL MSL 1 - Unlimited
  • Operating Temperature Min -55 °C
  • SVHC No SVHC (15-Jun-2015)

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Availability:  2,287

  • 2,287 in stock for same day shipping
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    More stock available week commencing 6/6/16

Price for: Each (Supplied on Cut Tape)

Minimum order quantity: 1

Order multiple quantity: 1

Price: $0.236 $0.236



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1 - 9 $0.236
10 - 99 $0.157
100 - 999 $0.066
1000+ $0.045

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4 years, 3 months ago
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You will get it as cut tape, you can check 67R2086 for bulk quantity as T&R.
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MOSFET Transistor, N Channel, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

Availability:​ 183,000  

Price for: Each (Supplied on Full Reel)

1+ $0.034 9000+ $0.029 24000+ $0.027 45000+ $0.026 More pricing


see cut-off times

More stock available week commencing 6/6/16

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