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FDV301N - 

MOSFET Transistor, N Channel, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

FAIRCHILD SEMICONDUCTOR FDV301N

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Manufacturer Part No:
FDV301N
Newark Part No.:
58K8856
Technical Datasheet:
(EN)
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Product Information

:
350mW
:
850mV
:
-
:
150°C
:
220mA
:
3Pins
:
4.5V
:
N Channel
:
-
:
SOT-23
:
3.1ohm
:
25V
:
MSL 1 - Unlimited
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Product Overview

The FDV301N from Fairchild is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance, this one N channel FET can replace several different digital transistors with different bias resistor values. FDV301N is suitable for low voltage and power management applications.
  • Drain to source voltage (Vds) of 25V
  • Gate to source voltage of 8V
  • Continuous drain current (Id) of 220mA
  • Power dissipation (Pd) of 350mW
  • Low on state resistance of 3.1ohm at Vgs 4.5V
  • Operating temperature range from -55°C to 150°C

Applications

Power Management, Consumer Electronics, Portable Devices, Industrial

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