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FAIRCHILD SEMICONDUCTOR  FDV301N  MOSFET Transistor, N Channel, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

FAIRCHILD SEMICONDUCTOR FDV301N
Technical Data Sheet (213.49KB) EN See all Technical Docs

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Product Overview

The FDV301N from Fairchild is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance, this one N channel FET can replace several different digital transistors with different bias resistor values. FDV301N is suitable for low voltage and power management applications.
  • Drain to source voltage (Vds) of 25V
  • Gate to source voltage of 8V
  • Continuous drain current (Id) of 220mA
  • Power dissipation (Pd) of 350mW
  • Low on state resistance of 3.1ohm at Vgs 4.5V
  • Operating temperature range from -55°C to 150°C

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
220mA
Drain Source Voltage Vds:
25V
On Resistance Rds(on):
3.1ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
850mV
Power Dissipation Pd:
350mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

MOSFET Transistor, N Channel, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

FAIRCHILD SEMICONDUCTOR

3,000 in stock

Price for: Each (Supplied on Full Reel)

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MOSFET Transistor, N Channel, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

FAIRCHILD SEMICONDUCTOR

1,305:  in stock

Price for: Each (Supplied on Cut Tape)

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