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FAIRCHILD SEMICONDUCTOR  FDV301N  MOSFET Transistor, N Channel, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

FAIRCHILD SEMICONDUCTOR FDV301N
Technical Data Sheet (276.96KB) EN See all Technical Docs

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Product Overview

The FDV301N is a 25V N-channel Digital Field Effect Transistor produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. It has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. This product is general usage and suitable for many different applications.
  • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th)<1.06V)
  • Gate-source Zener for ESD ruggedness (>6kV human body model)
  • Replace multiple NPN digital transistors with one DMOS FET
  • 8V Gate source voltage (VGSS)
  • 357°C/W Thermal resistance, junction to ambient

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
220mA
Drain Source Voltage Vds:
25V
On Resistance Rds(on):
3.1ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
850mV
Power Dissipation Pd:
350mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Authorized Distributor

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MOSFET Transistor, N Channel, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

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MOSFET Transistor, N Channel, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

FAIRCHILD SEMICONDUCTOR

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Contact us for more availability or to purchase on backorder

Price for: Each (Supplied on Cut Tape)

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