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FDV301N - 

MOSFET Transistor, N Channel, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

FAIRCHILD SEMICONDUCTOR FDV301N

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Manufacturer Part No:
FDV301N
Newark Part No.:
67R2086
Technical Datasheet:
(EN)
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Product Information

:
350mW
:
850mV
:
-
:
150°C
:
220mA
:
3Pins
:
4.5V
:
N Channel
:
-
:
SOT-23
:
3.1ohm
:
25V
:
MSL 1 - Unlimited
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Product Overview

The FDV301N is a 25V N-channel Digital Field Effect Transistor produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. It has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. This product is general usage and suitable for many different applications.
  • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th)<1.06V)
  • Gate-source Zener for ESD ruggedness (>6kV human body model)
  • Replace multiple NPN digital transistors with one DMOS FET
  • 8V Gate source voltage (VGSS)
  • 357°C/W Thermal resistance, junction to ambient

Applications

Industrial

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