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FDV301N - 

MOSFET Transistor, N Channel, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

FDV301N - MOSFET Transistor, N Channel, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

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Manufacturer Part No:
FDV301N
Newark Part No.:
67R2086
Technical Datasheet:
(EN)
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Product Overview

The FDV301N is a 25V N-channel Digital Field Effect Transistor produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. It has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. This product is general usage and suitable for many different applications.
  • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th)<1.06V)
  • Gate-source Zener for ESD ruggedness (>6kV human body model)
  • Replace multiple NPN digital transistors with one DMOS FET
  • 8V Gate source voltage (VGSS)
  • 357°C/W Thermal resistance, junction to ambient

Applications

Industrial

Product Information

:
N Channel
:
220mA
:
25V
:
3.1ohm
:
4.5V
:
850mV
:
350mW
:
SOT-23
:
3Pins
:
150°C
:
-
:
-
:
MSL 1 - Unlimited
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MOSFET Transistor, N Channel, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

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Awaiting Delivery

Available for backorder to lead times shown

 
Check stock and lead times

87,000 Further stock expected to ship on May 31, 2018

36,000 Further stock expected to ship on Jun 4, 2018

51,000 Further stock expected to ship on Jun 7, 2018

More stock available week commencing 3/23/20

Contact me when back in stock

Alternatives Available

58K8856 - MOSFET Transistor, N Channel, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

25AC9576 - 25V N-CH. FET 4 O SOT23

$0.033 $ 0.03
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6000 + $0.032
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