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FAIRCHILD SEMICONDUCTOR  FDP8870  MOSFET Transistor, N Channel, 156 A, 30 V, 0.0034 ohm, 10 V, 2.5 V

FAIRCHILD SEMICONDUCTOR FDP8870
Technical Data Sheet (463.58KB) EN See all Technical Docs

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Product Overview

The FDP8870 is a N-channel MOSFET produced using Fairchild Semiconductor's PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
  • Low gate charge
  • High performance Trench technology for extremely low RDS (ON)
  • High power and current handling capability

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
156A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.0034ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.5V
Power Dissipation Pd:
160W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

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