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FAIRCHILD SEMICONDUCTOR  FDN5630  MOSFET Transistor, N Channel, 1.7 A, 60 V, 0.073 ohm, 10 V, 2.4 V

FAIRCHILD SEMICONDUCTOR FDN5630
Technical Data Sheet (273.45KB) EN See all Technical Docs

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Product Overview

The FDN5630 is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild's the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
  • Low gate charge
  • Optimized for use in high frequency DC/DC converters

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
1.7A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.073ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.4V
Power Dissipation Pd:
500mW
Transistor Case Style:
SuperSOT
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

MOSFET Transistor, N Channel, 1.7 A, 60 V, 100 mohm, 10 V, 2.4 V

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