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FAIRCHILD SEMICONDUCTOR  FDN337N  MOSFET Transistor, N Channel, 2.2 A, 30 V, 0.054 ohm, 4.5 V, 700 mV

FAIRCHILD SEMICONDUCTOR FDN337N

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Product Overview

The FDN337N from Fairchild is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using Fairchild's proprietary, high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistance, thus suite for low voltage applications in notebook computers, portable phones, PCMCIA cards and other battery powered circuits where fast switching and low inline power loss are needed in a very small outline surface mount package.
  • High density cell design for extremely low Rds(on)
  • Exceptional on resistance and maximum DC current capability
  • Drain to source voltage (Vds) of 30V
  • Gate to source voltage of ±8V
  • Low on state resistance of 65mohm at Vgs 4.5V
  • Continuous drain current of 2.2A
  • Maximum power dissipation of 500mW
  • Operating junction temperature range from -55°C to 150°C

Applications

Power Management; Industrial; Portable Devices; Consumer Electronics

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Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
2.2A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.054ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
700mV
Power Dissipation Pd:
500mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes

Applications

  • Power Management;
  • Industrial;
  • Portable Devices;
  • Consumer Electronics

Substitutes

MOSFET Transistor, N Channel, 2.2 A, 30 V, 0.054 ohm, 4.5 V, 700 mV

FAIRCHILD SEMICONDUCTOR

8,628: 

Price for: Each (Supplied on Full Reel)

1+ $0.106 9000+ $0.106 24000+ $0.099 45000+ $0.089

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