FAIRCHILD SEMICONDUCTOR  FDN337N  MOSFET Transistor, N Channel, 2.2 A, 30 V, 0.054 ohm, 4.5 V, 700 mV


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Product Overview

The FDN337N from Fairchild is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using Fairchild's proprietary, high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistance, thus suite for low voltage applications in notebook computers, portable phones, PCMCIA cards and other battery powered circuits where fast switching and low inline power loss are needed in a very small outline surface mount package.
  • High density cell design for extremely low Rds(on)
  • Exceptional on resistance and maximum DC current capability
  • Drain to source voltage (Vds) of 30V
  • Gate to source voltage of ±8V
  • Low on state resistance of 65mohm at Vgs 4.5V
  • Continuous drain current of 2.2A
  • Maximum power dissipation of 500mW
  • Operating junction temperature range from -55°C to 150°C


Power Management; Industrial; Portable Devices; Consumer Electronics
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Product Specifications, Documents & More

  • Continuous Drain Current Id: 2.2A
  • Drain Source Voltage Vds: 30V
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 3
  • On Resistance Rds(on): 0.054ohm
  • Operating Temperature Max: 150°C
  • Operating Temperature Min: -55°C
  • Power Dissipation Pd: 500mW
  • Rds(on) Test Voltage Vgs: 4.5V
  • SVHC: No SVHC (15-Jun-2015)
  • Threshold Voltage Vgs Typ: 700mV
  • Transistor Case Style: SOT-23
  • Transistor Polarity: N Channel

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Availability:  3,090

  • 3,090 in stock for same day shipping
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    More stock available week commencing 12/28/15

Price for: Cut Tape 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: $0.453 $0.453



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1 - 9 $0.453
10 - 99 $0.302
100 - 999 $0.168
1000+ $0.126

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MOSFET Transistor, N Channel, 2.2 A, 30 V, 0.054 ohm, 4.5 V, 700 mV


Price for: Full Reel 1

1+ $0.106 9000+ $0.106 24000+ $0.099 45000+ $0.089


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