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FAIRCHILD SEMICONDUCTOR  FDN337N  MOSFET Transistor, N Channel, 2.2 A, 30 V, 0.054 ohm, 4.5 V, 700 mV

FAIRCHILD SEMICONDUCTOR FDN337N
Manufacturer Part No:
FDN337N
Newark Part No.:
58K1464
Technical Datasheet:
See all Technical Docs

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Product Overview

The FDN337N from Fairchild is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using Fairchild's proprietary, high cell density, DMOS technology, very high density process is especially...
  • High density cell design for extremely low Rds(on)
  • Exceptional on resistance and maximum DC current capability
  • Drain to source voltage (Vds) of 30V
  • Gate to source voltage of ±8V
  • Low on state resistance of 65mohm at Vgs 4.5V
  • Continuous drain current of 2.2A
  • Maximum power dissipation of 500mW
  • Operating junction temperature range from -55°C to 150°C

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
2.2A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.054ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
700mV
Power Dissipation Pd:
500mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Industrial;
  • Portable Devices;
  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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MOSFET Transistor, N Channel, 2.2 A, 30 V, 0.054 ohm, 4.5 V, 700 mV

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MOSFET Transistor, N Channel, 2.2 A, 30 V, 65 mohm, 4.5 V, 700 mV

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MOSFET Transistor, N Channel, 2.2 A, 30 V, 0.054 ohm, 4.5 V, 700 mV

FAIRCHILD SEMICONDUCTOR

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