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FAIRCHILD SEMICONDUCTOR  FDN306P  MOSFET Transistor, P Channel, -2.6 A, -12 V, 0.03 ohm, -4.5 V, -600 mV

FAIRCHILD SEMICONDUCTOR FDN306P

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Product Overview

The FDN306P is a P-channel 1.8V specified MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.
  • Fast switching
  • High performance trench technology for extremely low RDS

Applications

Power Management

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Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-2.6A
Drain Source Voltage Vds:
-12V
On Resistance Rds(on):
0.03ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
-600mV
Power Dissipation Pd:
500mW
Transistor Case Style:
SuperSOT
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes

Applications

  • Power Management

Substitutes

MOSFET Transistor, P Channel, -2.6 A, -12 V, 0.03 ohm, -4.5 V, -600 mV

FAIRCHILD SEMICONDUCTOR

12,000: 

Price for: Each (Supplied on Full Reel)

1+ $0.134 9000+ $0.133 24000+ $0.125 45000+ $0.111

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