Low

FDG6301N - 

Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV

ON SEMICONDUCTOR/FAIRCHILD FDG6301N

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Manufacturer Part No:
FDG6301N
Newark Part No.:
58K8834
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
300mW
:
850mV
:
-
:
150°C
:
220mA
:
6Pins
:
4.5V
:
Dual N Channel
:
-
:
SC-70
:
4ohm
:
25V
:
MSL 1 - Unlimited
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Product Overview

The FDG6301N is a dual N-channel logic level enhancement-mode Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signals MOSFETs.
  • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <1.5V)
  • Gate-source Zener for ESD ruggedness (>6kV human body model)
  • Compact industry standard surface-mount-package

Applications

Industrial, Power Management

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Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV

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