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FAIRCHILD SEMICONDUCTOR  FDG6301N  Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV

FAIRCHILD SEMICONDUCTOR FDG6301N
Technical Data Sheet (173.08KB) EN See all Technical Docs

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Product Overview

The FDG6301N is a dual N-channel logic level enhancement-mode Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signals MOSFETs.
  • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <1.5V)
  • Gate-source Zener for ESD ruggedness (>6kV human body model)
  • Compact industry standard surface-mount-package

 

Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
220mA
Drain Source Voltage Vds:
25V
On Resistance Rds(on):
4ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
850mV
Power Dissipation Pd:
300mW
Transistor Case Style:
SC-70
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV

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Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV

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FDG6301N_F085

TAPE REEL / N-Channel Power Mosfet

FAIRCHILD SEMICONDUCTOR

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