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FAIRCHILD SEMICONDUCTOR  FDC655BN  MOSFET Transistor, N Channel, 6.3 A, 30 V, 0.021 ohm, 10 V, 1.9 V

FAIRCHILD SEMICONDUCTOR FDC655BN
Manufacturer Part No:
FDC655BN
Newark Part No.:
15R3422
Technical Datasheet:
See all Technical Docs

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Product Overview

The FDC655BN is a logic level single N-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It has been especially tailored to minimized ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
  • Fast switching
  • Low gate charge
  • High performance Trench technology for extremely low RDS (ON)

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
6.3A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.021ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.9V
Power Dissipation Pd:
1.6W
Transistor Case Style:
SuperSOT
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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MOSFET Transistor, N Channel, 6.3 A, 30 V, 0.021 ohm, 10 V, 1.9 V

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MOSFET Transistor, N Channel, 6.3 A, 30 V, 0.021 ohm, 10 V, 1.9 V

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