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FAIRCHILD SEMICONDUCTOR  FDC6303N  Dual MOSFET, Dual N Channel, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV

FAIRCHILD SEMICONDUCTOR FDC6303N
Manufacturer Part No:
FDC6303N
Newark Part No.:
58K8819
Technical Datasheet:
See all Technical Docs

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Product Overview

The FDC6303N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
  • Very low level gate drive requirements allowing direct operation in 3V circuits
  • Gate-source Zener for ESD ruggedness
  • Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET
  • 8V Gate-source voltage
  • 0.68A Continuous drain/output current
  • 2A Pulsed drain/output current

 

Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
680mA
Drain Source Voltage Vds:
25V
On Resistance Rds(on):
450mohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
800mV
Power Dissipation Pd:
900mW
Transistor Case Style:
SuperSOT
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial
  • Power Management

Legislation and Environmental

Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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Dual MOSFET, Dual N Channel, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV

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Dual MOSFET, Dual N Channel, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV

FAIRCHILD SEMICONDUCTOR

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