Low

FDC6303N - 

Dual MOSFET, Dual N Channel, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV

FAIRCHILD SEMICONDUCTOR FDC6303N

The actual product may differ from image shown

Manufacturer Part No:
FDC6303N
Newark Part No.:
58K8819
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
900mW
:
800mV
:
-
:
150°C
:
680mA
:
6Pins
:
4.5V
:
Dual N Channel
:
-
:
SuperSOT
:
450mohm
:
25V
:
MSL 1 - Unlimited
Find similar products Choose and modify the attributes above to find similar products.

Product Overview

The FDC6303N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
  • Very low level gate drive requirements allowing direct operation in 3V circuits
  • Gate-source Zener for ESD ruggedness
  • Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET
  • 8V Gate-source voltage
  • 0.68A Continuous drain/output current
  • 2A Pulsed drain/output current

Applications

Industrial, Power Management

Substitutes

Compare Selected
Manufacturer Part Number
Newark Part No.
Manufacturer / Description
Avail
Price For
Quantity

FAIRCHILD SEMICONDUCTOR

Dual MOSFET, Dual N Channel, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV

Awaiting Delivery
Contact us for more availability or to purchase on backorder

Each (Supplied on Full Reel)

3000+ $0.132 6000+ $0.123 9000+ $0.112 15000+ $0.102

Add

Associated Products

Compare Selected