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FAIRCHILD SEMICONDUCTOR  FDB52N20TM  MOSFET Transistor, N Channel, 52 A, 200 V, 0.041 ohm, 10 V, 5 V

FAIRCHILD SEMICONDUCTOR FDB52N20TM
FAIRCHILD SEMICONDUCTOR FDB52N20TM
Technical Data Sheet (483.86KB) EN See all Technical Docs

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FAIRCHILD SEMICONDUCTOR FDB52N20TM
FAIRCHILD SEMICONDUCTOR FDB52N20TM

Product Overview

The FDB52N20TM is an UniFET™ N-channel High Voltage MOSFET produced based on Fairchild Semiconductor's planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power and ATX.
  • 100% Avalanche tested
  • 49nC Typical low gate charge
  • 66pF Typical low Crss

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
52A
Drain Source Voltage Vds:
200V
On Resistance Rds(on):
0.041ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
5V
Power Dissipation Pd:
357W
Transistor Case Style:
TO-263AB
No. of Pins:
2Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Lighting

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

MOSFET Transistor, N Channel, 52 A, 200 V, 0.041 ohm, 10 V, 5 V

FAIRCHILD SEMICONDUCTOR

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MOSFET Transistor, N Channel, 52 A, 200 V, 0.041 ohm, 10 V, 5 V

FAIRCHILD SEMICONDUCTOR

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