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FAIRCHILD SEMICONDUCTOR  FDB3652  MOSFET Transistor, N Channel, 61 A, 100 V, 0.014 ohm, 10 V, 4 V

FAIRCHILD SEMICONDUCTOR FDB3652
Technical Data Sheet (747.69KB) EN See all Technical Docs

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Product Overview

The FDB3652 is a N-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and micro solar inverter.
  • Low miller charge
  • Low Qrr body diode
  • UIS Capability (single pulse and repetitive pulse)

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
61A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.014ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
150W
Transistor Case Style:
TO-263AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Motor Drive & Control;
  • Communications & Networking

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Y-Ex
Authorized Distributor

Substitutes

FDB3652

MOSFET Transistor, N Channel, 61 A, 100 V, 0.014 ohm, 10 V, 4 V

FAIRCHILD SEMICONDUCTOR

0

Price for: Each (Supplied on Full Reel)

800+ $0.992 2400+ $0.901 9600+ $0.873

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