Low

FAIRCHILD SEMICONDUCTOR  FDB3632  MOSFET Transistor, N Channel, 80 A, 100 V, 9 mohm, 10 V, 4 V

FAIRCHILD SEMICONDUCTOR FDB3632
Technical Data Sheet (914.30KB) EN See all Technical Docs

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Product Overview

The FDB3632 is a N-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It is suitable for use in synchronous rectification, battery protection circuit and micro solar inverter.
  • Low miller charge
  • Low Qrr body diode
  • UIS Capability (single pulse and repetitive pulse)

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
80A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.009ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
310W
Transistor Case Style:
TO-263AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Y-Ex
Authorized Distributor

Substitutes

MOSFET Transistor, N Channel, 80 A, 100 V, 9 mohm, 10 V, 4 V

FAIRCHILD SEMICONDUCTOR

3,200 in stock

Price for: Each (Supplied on Full Reel)

800+ $1.45 1600+ $1.34 2400+ $1.30 4000+ $1.20

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