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FAIRCHILD SEMICONDUCTOR  FDB33N25TM  MOSFET Transistor, N Channel, 33 A, 250 V, 0.077 ohm, 10 V, 3 V

FAIRCHILD SEMICONDUCTOR FDB33N25TM
Manufacturer Part No:
FDB33N25TM
Newark Part No.:
84W8845
Technical Datasheet:
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Product Overview

The FDB33N25TM is a 250V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100ns and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200ns and 4.5V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET's body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
  • Low gate charge
  • 100% Avalanche tested

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
33A
Drain Source Voltage Vds:
250V
On Resistance Rds(on):
0.077ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
235W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Lighting

Legislation and Environmental

Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

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