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FAIRCHILD SEMICONDUCTOR  FDB047N10  MOSFET Transistor, N Channel, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V

FAIRCHILD SEMICONDUCTOR FDB047N10
Manufacturer Part No:
FDB047N10
Newark Part No.:
84W8844
Technical Datasheet:
See all Technical Docs

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Product Overview

The FDB047N10 is a N-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and micro solar inverter.
  • Fast switching speed
  • Low gate charge
  • High performance Trench technology for extremely low RDS (ON)
  • High power and current handling capability

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
120A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.0039ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3.5V
Power Dissipation Pd:
375W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

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Legislation and Environmental

Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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