Low

FDB047N10 - 

MOSFET Transistor, N Channel, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V

FAIRCHILD SEMICONDUCTOR FDB047N10

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Manufacturer Part No:
FDB047N10
Newark Part No.:
84W8844
Technical Datasheet:
(EN)
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Product Information

:
375W
:
3.5V
:
-
:
175°C
:
120A
:
3Pins
:
10V
:
N Channel
:
-
:
TO-263
:
0.0039ohm
:
100V
:
MSL 1 - Unlimited
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Product Overview

The FDB047N10 is a N-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and micro solar inverter.
  • Fast switching speed
  • Low gate charge
  • High performance Trench technology for extremely low RDS (ON)
  • High power and current handling capability

Applications

Power Management, Motor Drive & Control, Communications & Networking

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FAIRCHILD SEMICONDUCTOR

MOSFET Transistor, N Channel, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V

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