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FAIRCHILD SEMICONDUCTOR  FDB047N10  MOSFET Transistor, N Channel, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V

FAIRCHILD SEMICONDUCTOR FDB047N10
Technical Data Sheet (560.43KB) EN See all Technical Docs

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Product Overview

The FDB047N10 is a N-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and micro solar inverter.
  • Fast switching speed
  • Low gate charge
  • High performance Trench technology for extremely low RDS (ON)
  • High power and current handling capability

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
120A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.0039ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3.5V
Power Dissipation Pd:
375W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Motor Drive & Control;
  • Communications & Networking

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

MOSFET Transistor, N Channel, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V

FAIRCHILD SEMICONDUCTOR

1,600 in stock

Price for: Each (Supplied on Full Reel)

800+ $1.84 Promotional price 1600+ $1.84 Promotional price 2400+ $1.84 Promotional price 4000+ $1.83 Promotional price

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MOSFET Transistor, N Channel, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V

FAIRCHILD SEMICONDUCTOR

31:  in stock

Price for: Each (Supplied on Cut Tape)

1+ $3.73 10+ $3.00 100+ $2.47 1000+ $2.13

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