Low

FAIRCHILD SEMICONDUCTOR  FCB36N60NTM  Power MOSFET, N Channel, 36 A, 600 V, 0.081 ohm, 10 V, 2 V

FAIRCHILD SEMICONDUCTOR FCB36N60NTM
Manufacturer Part No:
FCB36N60NTM
Newark Part No.:
85W3133
Technical Datasheet:
See all Technical Docs

The actual product may differ from image shown

Product Overview

The FCB36N60NTM is a N-channel SuperFET® high voltage super-junction MOSFET employs a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp ON-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
  • Ultra low gate charge (Qg = 86nC)
  • Low effective output capacitance (Coss.eff = 361pF)
  • 100% avalanche tested

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
36A
Drain Source Voltage Vds:
600V
On Resistance Rds(on):
0.081ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
312W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

Find similar products  grouped by common attribute

Applications

  • Industrial
  • Power Management
  • Communications & Networking
  • Alternative Energy

Legislation and Environmental

Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

FCB36N60NTM

Power MOSFET, N Channel, 36 A, 600 V, 0.081 ohm, 10 V, 2 V

FAIRCHILD SEMICONDUCTOR

0

Price for: Each (Supplied on Full Reel)

800+ $4.67 1600+ $4.61 3200+ $4.55 4800+ $4.49 More pricing

Buy

Associated Products