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FAIRCHILD SEMICONDUCTOR  FCB20N60  Power MOSFET, N Channel, 20 A, 600 V, 150 mohm, 10 V, 5 V

FAIRCHILD SEMICONDUCTOR FCB20N60
Technical Data Sheet (434.22KB) EN See all Technical Docs

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Product Overview

The FCB20N60 is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
  • Ultra low gate charge (Qg = 75nC)
  • Low effective output capacitance (Coss.eff = 165pF)
  • 100% avalanche tested

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
20A
Drain Source Voltage Vds:
600V
On Resistance Rds(on):
0.15ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
5V
Power Dissipation Pd:
208W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management;
  • Communications & Networking;
  • Lighting;
  • Alternative Energy

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

SIHB21N60EF-GE3

N-CHANNEL 600V

VISHAY

0

Price for: Each

1000+ $2.59

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Associated Products