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FAIRCHILD SEMICONDUCTOR  2N7002  MOSFET Transistor, N Channel, 115 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

FAIRCHILD SEMICONDUCTOR 2N7002
Technical Data Sheet (109.81KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control and power MOSFET gate drivers.
  • High density cell design for extremely low RDS (ON)
  • High saturation current capability
  • Voltage controlled small signal switch
  • Rugged and reliable

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
115mA
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
1.2ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.1V
Power Dissipation Pd:
200mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Motor Drive & Control;
  • Audio

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes

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