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FAIRCHILD SEMICONDUCTOR  2N7000  MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

FAIRCHILD SEMICONDUCTOR 2N7000
FAIRCHILD SEMICONDUCTOR 2N7000
Manufacturer Part No:
2N7000
Newark Part No.:
58K9650
Technical Datasheet:
See all Technical Docs
FAIRCHILD SEMICONDUCTOR 2N7000
FAIRCHILD SEMICONDUCTOR 2N7000

The actual product may differ from image shown

Product Overview

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed current up to 2A. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
  • Voltage Controlled Small Signal Switch
  • Rugged and Reliable
  • High Saturation Current Capability

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
200mA
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
1.2ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.1V
Power Dissipation Pd:
400mW
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Audio
  • Signal Processing

Legislation and Environmental

Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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